| Part Number | 2N2857 |
|---|---|
| Part Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 1.9GHz |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Gain | - |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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2N1008B | EXSHINE | alloy-junction germanium transistors | Details |
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2N1016B | Microsemi Corporation | NPN TRANSISTOR | Details |
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2N1016C | Microsemi Corporation | NPN TRANSISTOR | Details |
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2N1016D | Microsemi Corporation | NPN TRANSISTOR | Details |
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2N1057 | EXSHINE | alloy-junction germanium transistors | Details |
