TN2106K1-G

TN2106K1-G - Microchip Technology

Part Number
TN2106K1-G
Manufacturer
Microchip Technology
Brief Description
MOSFET N-CH 60V 280MA SOT23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TN2106K1-G PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
15000 pcs
Reference Price
USD 0.3708/pcs
Our Price
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TN2106K1-G Detailed Description

Part Number TN2106K1-G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 280mA (Tj)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 360mW (Tc)
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB (SOT23)
Package / Case TO-236-3, SC-59, SOT-23-3
Weight -
Country of Origin -

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