AOWF8N50 - Alpha & Omega Semiconductor Inc.

Part Number	AOWF8N50
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1042pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	27.8W (Tc)
Rds On (Max) @ Id, Vgs	850 mOhm @ 4A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262F
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Weight	-
Country of Origin	-

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AOW11N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO262	Details
AOW11S60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO262	Details
AOW11S65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 11A TO262	Details
AOW12N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 12A TO262	Details
AOW12N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 12A TO262	Details
AOW12N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 12A TO262	Details