AOWF296 - Alpha & Omega Semiconductor Inc.

Part Number	AOWF296
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	9.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2785pF @ 50V
FET Feature	-
Power Dissipation (Max)	26W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262F
Package / Case	TO-262-3 Full Pack, I²Pak
Weight	-
Country of Origin	-

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AOW11N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO262	Details
AOW11S60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO262	Details
AOW11S65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 11A TO262	Details
AOW12N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 12A TO262	Details
AOW12N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 12A TO262	Details
AOW12N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 12A TO262	Details