AOT3N100

AOT3N100 - Alpha & Omega Semiconductor Inc.

Part Number
AOT3N100
Manufacturer
Alpha & Omega Semiconductor Inc.
Brief Description
MOSFET N-CH 1000V 2.8A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
AOT3N100 PDF online browsing
Datasheet PDF Download
AOT3N100.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
32690 pcs
Reference Price
USD 0.7805/pcs
Our Price
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AOT3N100 Detailed Description

Part Number AOT3N100
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 132W (Tc)
Rds On (Max) @ Id, Vgs 6 Ohm @ 1.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Weight -
Country of Origin -

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