AON1611 - Alpha & Omega Semiconductor Inc.

Part Number	AON1611
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.5V, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Rds On (Max) @ Id, Vgs	58 mOhm @ 4A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN (1.6x1.6)
Package / Case	6-PowerUFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
AON1605	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 0.7A 3DFN	Details
AON1605_001	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 0.7A 3DFN	Details
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AON1606_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 0.7A 3DFN	Details
AON1610	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 4A 6DFN	Details
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AON2260	Alpha & Omega Semiconductor Inc.	MOSFET N CH 60V 6A DFN 2x2B	Details