AOB2606L - Alpha & Omega Semiconductor Inc.

Part Number	AOB2606L
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 72A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4050pF @ 30V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs	6.2 mOhm @ 20A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
AOB10B60D	Alpha & Omega Semiconductor Inc.	IGBT 600V 20A 163W TO263	Details
AOB10B65M1	Alpha & Omega Semiconductor Inc.	IGBT 650V 10A TO263	Details
AOB10N60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO263	Details
AOB10T60PL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO263	Details
AOB1100L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 8A TO263	Details
AOB11C60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO-263	Details
AOB11C60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO263	Details
AOB11N60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO263	Details
AOB11S60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO263	Details
AOB11S65L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 11A TO263	Details