AOB11S60L - Alpha & Omega Semiconductor Inc.

Part Number	AOB11S60L
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 100V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	178W (Tc)
Rds On (Max) @ Id, Vgs	399 mOhm @ 3.8A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

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AOB11S60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO263	Details
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