Company Profile - Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.
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GP2M012A060F | MOSFET N-CH 600V 12A TO220F | Details |
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GP2M010A065F | MOSFET N-CH 650V 9.5A TO220F | Details |
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GP2M008A060PGH | MOSFET N-CH 600V 7.5A IPAK | Details |
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GP2M008A060FGH | MOSFET N-CH 600V 7.5A TO220F | Details |
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GP2M005A050PG | MOSFET N-CH 500V 4.5A IPAK | Details |
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GP2M005A050CG | MOSFET N-CH 500V 4.5A DPAK | Details |
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GP2M002A060FG | MOSFET N-CH 600V 2A TO220F | Details |
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GP1M023A050N | MOSFET N-CH 500V 23A TO3PN | Details |
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GP1M016A060H | MOSFET N-CH 600V 16A TO220 | Details |
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GP1M016A025FG | MOSFET N-CH 250V 16A TO220F | Details |
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GP1M011A050FH | MOSFET N-CH 500V 11A TO220F | Details |
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GP1M010A060H | MOSFET N-CH 600V 10A TO220 | Details |
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GP1M003A080CH | MOSFET N-CH 800V 3A DPAK | Details |
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GP2M008A060PG | MOSFET N-CH 600V 7.5A IPAK | Details |
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GP2M010A060F | MOSFET N-CH 600V 10A TO220F | Details |
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GP2D015A120B | DIODE SCHOTTKY 1200V 15A TO247-2 | Details |
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GP2D020A120B | DIODE SCHOTTKY 1.2KV 20A TO247-2 | Details |
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GP2D030A060B | DIODE SCHOTTKY 600V 30A TO247-2 | Details |
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GP1M018A020PG | MOSFET N-CH 200V 18A IPAK | Details |
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GP2D005A170B | DIODE SCHOTTKY 1700V 5A TO247-2 | Details |
