Company Profile - Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.
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GSXD100A020S1-D3 | DIODE SCHOTTKY 200V 100A SOT227 | Details |
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GSXD160A008S1-D3 | DIODE SCHOTTKY 80V 160A SOT227 | Details |
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GSXD060A006S1-D3 | DIODE SCHOTTKY 60V 60A SOT227 | Details |
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GSXF100A040S1-D3 | DIODE FAST REC 400V 100A SOT227 | Details |
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GSXD050A008S1-D3 | DIODE SCHOTTKY 80V 50A SOT227 | Details |
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GSXF030A100S1-D3 | DIODE FAST REC 1000V 30A SOT227 | Details |
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GSXD060A015S1-D3 | DIODE SCHOTTKY 150V 60A SOT227 | Details |
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GP2D015A120A | SIC SCHOTTKY RECTIFIER | Details |
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GP2D010A065C | SIC SCHOTTKY RECTIFIER | Details |
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GP2D010A060B | SIC SCHOTTKY DIODE 600V 10A TO-2 | Details |
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GP2D012A065C | DIODE SCHOTTKY 650V 29A TO252-2 | Details |
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GDP30S120B | DIODE SCHOTTKY 1.2KV 30A TO247-2 | Details |
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GDP30P120B | DIODE SCHOTTKY 1200V 81A TO247-2 | Details |
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GDP15S120B | DIODE SCHOTTKY 1200V 15A TO247-2 | Details |
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GDP12S060A | DIODE SCHOTTKY 600V 12A TO220-2 | Details |
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GP2M002A060PG | MOSFET N-CH 600V 2A | Details |
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GP1M018A020FG | MOSFET N-CH 200V 18A TO220F | Details |
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GP1M012A060FH | MOSFET N-CH 600V 12A TO220F | Details |
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GP1M009A060FH | MOSFET N-CH 600V 9A TO220F | Details |
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GP1M009A020HG | MOSFET N-CH 200V 9A TO220 | Details |
