Company Profile - EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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EPC2020ENG | TRANS GAN 60V 60A BUMPED DIE | Details |
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EPC2034ENGRT | TRANS GAN 200V 31A BUMPED DIE | Details |
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EPC2038ENGR | TRANS GAN 100V 0.5A BUMPED DIE | Details |
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EPC2021 | TRANS GAN 80V 90A BUMPED DIE | Details |
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EPC2012 | TRANS GAN 200V 3A BUMPED DIE | Details |
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EPC2029 | TRANS GAN 80V 31A BUMPED DIE | Details |
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EPC2024 | MOSFET NCH 40V 60A DIE | Details |
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EPC2033 | TRANS GAN 150V 7MOHM BUMPED DIE | Details |
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EPC2035 | TRANS GAN 60V 1A BUMPED DIE | Details |
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EPC2040 | MOSFET NCH 15V 3.4A DIE | Details |
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EPC2037ENGR | TRANS GAN 100V BUMPED DIE | Details |
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EPC8004 | TRANS GAN 40V 2.7A BUMPED DIE | Details |
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EPC8010 | TRANS GAN 100V 2.7A BUMPED DIE | Details |
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EPC2018 | TRANS GAN 150V 12A BUMPED DIE | Details |
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EPC2010 | TRANS GAN 200V 12A BUMPED DIE | Details |
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EPC2031ENGRT | MOSFET NCH 60V 31A DIE | Details |
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EPC2030ENGRT | MOSFET NCH 40V 31A DIE | Details |
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EPC8002 | TRANS GAN 65V 2.7A BUMPED DIE | Details |
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EPC2022 | TRANS GAN 100V 3MOHM BUMPED DIE | Details |
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EPC2001C | TRANS GAN 100V 36A BUMPED DIE | Details |
