2SD2257,Q(J - Toshiba Semiconductor and Storage

Artikelnummer	2SD2257,Q(J
Teilstatus	Last Time Buy
Transistor-Typ	NPN
Aktuell - Sammler (Ic) (Max)	3A
Spannung - Kollektor-Emitter-Durchbruch (max.)	100V
Vce Sättigung (Max) @ Ib, Ic	1.5V @ 1.5mA, 1.5A
Aktuell - Kollektor Cutoff (Max)	10µA (ICBO)
Gleichstromverstärkung (hFE) (Min) @ Ic, Vce	2000 @ 2A, 2V
Leistung max	2W
Frequenz - Übergang	-
Betriebstemperatur	150°C (TJ)
Befestigungsart	Through Hole
Paket / Fall	TO-220-3 Full Pack
Lieferantengerätepaket	TO-220NIS
Gewicht	-
Ursprungsland	-

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