BR25H320FVT-2CE2 - Rohm Semiconductor

Artikelnummer	BR25H320FVT-2CE2
Teilstatus	Active
Speichertyp	Non-Volatile
Speicherformat	EEPROM
Technologie	EEPROM
Speichergröße	32Kb (4K x 8)
Taktfrequenz	10MHz
Schreibe Zykluszeit - Wort, Seite	4ms
Zugriffszeit	-
Speicherschnittstelle	SPI
Spannungsversorgung	2.5V ~ 5.5V
Betriebstemperatur	-40°C ~ 125°C (TA)
Befestigungsart	Surface Mount
Paket / Fall	8-TSSOP (0.173", 4.40mm Width)
Lieferantengerätepaket	8-TSSOP-B
Gewicht	-
Ursprungsland	-

Artikelnummer	Hersteller	Beschreibung	Aussicht
BR25H320-W	ROHM	HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type	Einzelheiten
BR25H320-WC	ROHM	125C Operating tempter	Einzelheiten
BR25H320-WE2	ROHM	HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type	Einzelheiten
BR25H320F-2CE2	Rohm Semiconductor	IC EEPROM 32K SPI 10MHZ 8SOP	Einzelheiten
BR25H320F-2LBH2	Rohm Semiconductor	IC EEPROM 32K SPI 10MHZ 8SOP	Einzelheiten
BR25H320F-W	ROHM	HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type	Einzelheiten
BR25H320F-WE2	ROHM	HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type	Einzelheiten
BR25H320FJ-2CE2	Rohm Semiconductor	IC EEPROM 32K SPI 10MHZ 8SOPJ	Einzelheiten
BR25H320FJ-W	ROHM	HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type	Einzelheiten
BR25H320FJ-WE2	ROHM	HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type	Einzelheiten