| Artikelnummer | ALD212900ASAL |
|---|---|
| Teilstatus | Active |
| FET Typ | 2 N-Channel (Dual) Matched Pair |
| FET-Eigenschaft | Logic Level Gate |
| Drain auf Source-Spannung (Vdss) | 10.6V |
| Strom - Dauerablass (Id) @ 25 ° C | 80mA |
| Rds Ein (Max) @ Id, Vgs | 14 Ohm |
| Vgs (th) (Max) @ Id | 10mV @ 20µA |
| Gate Ladung (Qg) (Max) @ Vgs | - |
| Eingangskapazität (Ciss) (Max) @ Vds | 30pF @ 5V |
| Leistung max | 500mW |
| Betriebstemperatur | 0°C ~ 70°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 8-SOIC (0.154", 3.90mm Width) |
| Lieferantengerätepaket | 8-SOIC |
| Gewicht | - |
| Ursprungsland | - |
| Bild | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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ALD210800APCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | Einzelheiten |
 |
ALD210800ASCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | Einzelheiten |
|
ALD210800PCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | Einzelheiten |
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ALD210800SCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | Einzelheiten |
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ALD210802PCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | Einzelheiten |
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ALD210802SCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | Einzelheiten |
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ALD210804PCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | Einzelheiten |
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ALD210804SCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | Einzelheiten |
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ALD210808APCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16DIP | Einzelheiten |
|
ALD210808ASCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 0.08A 16SOIC | Einzelheiten |
