| Part Number | VS-GBPC3510W |
|---|---|
| Part Status | Active |
| Diode Type | Single Phase |
| Technology | Standard |
| Voltage - Peak Reverse (Max) | 1000V |
| Current - Average Rectified (Io) | 35A |
| Voltage - Forward (Vf) (Max) @ If | - |
| Current - Reverse Leakage @ Vr | 2mA @ 1000V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 4-Square, GBPC-W |
| Supplier Device Package | GBPC-W |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
VS-GA100NA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 100A 250W SOT-227 | Details |
|
VS-GA100TS120UPBF | Vishay Semiconductor Diodes Division | IGBT 1200V 182A 520W INT-A-PAK | Details |
|
VS-GA100TS60SF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W | Details |
|
VS-GA100TS60SFPBF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W INT-A-PAK | Details |
|
VS-GA200HS60S1 | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W | Details |
|
VS-GA200HS60S1PBF | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W INT-A-PAK | Details |
|
VS-GA200SA60SP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | Details |
|
VS-GA200SA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 200A 500W SOT-227 | Details |
|
VS-GA200TH60S | Vishay Semiconductor Diodes Division | IGBT 600V 260A 1042W INT-A-PAK | Details |
 |
VS-GA250SA60S | Vishay Semiconductor Diodes Division | IGBT 600V 400A SOT227 | Details |
