VS-36MT160 - Vishay Semiconductor Diodes Division

Part Number	VS-36MT160
Part Status	Active
Diode Type	Three Phase
Technology	Standard
Voltage - Peak Reverse (Max)	1600V
Current - Average Rectified (Io)	35A
Voltage - Forward (Vf) (Max) @ If	-
Current - Reverse Leakage @ Vr	10µA @ 1600V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	QC Terminal
Package / Case	5-Square, D-63
Supplier Device Package	D-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-300CNQ045PBF	Vishay Semiconductor Diodes Division	DIODE ARRAY SCHOTTKY 45V TO244	Details
VS-300MT160C	Vishay Semiconductor Diodes Division	BRIDGE RECT 3P 1.6KV 258A MTC	Details
VS-300MT180C	Vishay Semiconductor Diodes Division	BRIDGE RECT 3P 1.8KV 258A MTC	Details
VS-300U10A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300A DO205AB	Details
VS-300U20A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 300A DO205AB	Details
VS-300U30A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 300A DO205AB	Details
VS-300U40A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 300A DO205AB	Details
VS-300U40AM20	Vishay Semiconductor Diodes Division	DIODE STD REC 300A DO-9	Details
VS-300U60A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 300A DO205AB	Details
VS-300UR10A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300A DO205AB	Details