| Part Number | SI7898DP-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI7892BDP | VISHAY | N-Channel, 30-V (D-S) MOSFET | Details |
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SI7892BDP-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 15A PPAK SO-8 | Details |
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SI7892BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 15A PPAK SO-8 | Details |
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SI7892DP | VISHAY | N-Channel 30-V (D-S) MOSFET | Details |
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SI7892DP-T1 | VIS | SI7892DP-T1 VIS QFN-8 New Original Stocks | Details |
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SI7892DP-T1-E3 | VISHAY | SI7892DP-T1-E3 VISHAY QFN-8 New Original Stocks | Details |
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SI7892DP-T1-GE3 | VISHAY | SI7892DP-T1-GE3 VISHAY SO-8 New Original Stocks | Details |
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SI7894DP | VISHAY | N-Channel 30-V (D-S) MOSFET | Details |
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SI7898DP | VISHAY | SI7898DP VISHAY QFN8 New Original Stocks | Details |
