| Part Number | SI7888DP-T1-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 12.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI7880ADP | VIS | SI7880ADP VIS QFN8 New Original Stocks | Details |
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SI7880ADP-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 40A PPAK SO-8 | Details |
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SI7880ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 40A PPAK SO-8 | Details |
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SI7880DP | VISHAY | SI7880DP VISHAY QFN New Original Stocks | Details |
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SI7880DP-T1 | VISHAY | SI7880DP-T1 VISHAY QFN New Original Stocks | Details |
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SI7880DP-T1-E3 | VISHAY | SI7880DP-T1-E3 VISHAY QFN-8 New Original Stocks | Details |
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SI7882DP | VISHAY | N-Channel Reduced Qg, Fast Switching MOSFET | Details |
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SI7882DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 13A PPAK SO-8 | Details |
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SI7882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 13A PPAK SO-8 | Details |
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SI7884BDP-T1-E3 | Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | Details |
