Part Number | SI7457DP-T1-GE3 |
---|---|
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5230pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 83.3W (Tc) |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 7.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |
Weight | - |
Country of Origin | - |