SI7439DP-T1-E3 Detailed Description
Part Number |
SI7439DP-T1-E3 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
150V |
Current - Continuous Drain (Id) @ 25°C |
3A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
6V, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
1.9W (Ta) |
Rds On (Max) @ Id, Vgs |
90 mOhm @ 5.2A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerPAK® SO-8 |
Package / Case |
PowerPAK® SO-8 |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR SI7439DP-T1-E3