SI5908DC-T1-GE3

SI5908DC-T1-GE3 - Vishay Siliconix

Part Number
SI5908DC-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET 2N-CH 20V 4.4A 1206-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI5908DC-T1-GE3 PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
15000 pcs
Reference Price
USD 0.616/pcs
Our Price
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SI5908DC-T1-GE3 Detailed Description

Part Number SI5908DC-T1-GE3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.4A
Rds On (Max) @ Id, Vgs 40 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Weight -
Country of Origin -

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