| Part Number | SI5858DU-T1-GE3 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2.3W (Ta), 8.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 4.4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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