| Part Number | SI5857DU-T1-GE3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2.3W (Ta), 10.4W (Tc) |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 3.6A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SI5853CDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 | Details |
 |
SI5853DC | VISHAY | SI5853DC VISHAY SOT-8 New Original Stocks | Details |
|
SI5853DC-T1 | VISHAY | SI5853DC-T1 VISHAY 1206-8 New Original Stocks | Details |
|
SI5853DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 2.7A 1206-8 | Details |
|
SI5853DDC | Vishay | SI5853DDC Vishay 1206-8 New Original Stocks | Details |
|
SI5853DDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 | Details |
|
SI5855CDC | VISHAY | P-Channel 20-V (D-S) MOSFET With Schottky Diode | Details |
|
SI5855CDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 3.7A 1206-8 | Details |
|
SI5855DC | VISHAY | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode | Details |
|
SI5855DC-T1 | VISHAY | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode | Details |
