| Part Number | SI5855DC-T1-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±8V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 2.7A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 1206-8 ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI5853CDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 | Details |
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SI5853DC | VISHAY | SI5853DC VISHAY SOT-8 New Original Stocks | Details |
|
SI5853DC-T1 | VISHAY | SI5853DC-T1 VISHAY 1206-8 New Original Stocks | Details |
|
SI5853DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 2.7A 1206-8 | Details |
|
SI5853DDC | Vishay | SI5853DDC Vishay 1206-8 New Original Stocks | Details |
|
SI5853DDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 | Details |
|
SI5855CDC | VISHAY | P-Channel 20-V (D-S) MOSFET With Schottky Diode | Details |
|
SI5855CDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 3.7A 1206-8 | Details |
|
SI5855DC | VISHAY | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode | Details |
|
SI5855DC-T1 | VISHAY | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode | Details |
