SI3909DV-T1-GE3 Detailed Description
Part Number |
SI3909DV-T1-GE3 |
Part Status |
Obsolete |
FET Type |
2 P-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
- |
Rds On (Max) @ Id, Vgs |
200 mOhm @ 1.8A, 4.5V |
Vgs(th) (Max) @ Id |
500mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs |
4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
Power - Max |
1.15W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package |
6-TSOP |
Weight |
- |
Country of Origin |
- |
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