SI2335DS-T1-GE3 Detailed Description
Part Number |
SI2335DS-T1-GE3 |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
12V |
Current - Continuous Drain (Id) @ 25°C |
3.2A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
1.8V, 4.5V |
Vgs(th) (Max) @ Id |
450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
1225pF @ 6V |
Vgs (Max) |
±8V |
FET Feature |
- |
Power Dissipation (Max) |
750mW (Ta) |
Rds On (Max) @ Id, Vgs |
51 mOhm @ 4A, 4.5V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23-3 (TO-236) |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Weight |
- |
Country of Origin |
- |
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