SI2327DS-T1-GE3

SI2327DS-T1-GE3 - Vishay Siliconix

Part Number
SI2327DS-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 200V 0.38A SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI2327DS-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3611 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SI2327DS-T1-GE3

SI2327DS-T1-GE3 Detailed Description

Part Number SI2327DS-T1-GE3
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 380mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Rds On (Max) @ Id, Vgs 2.35 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR SI2327DS-T1-GE3