| Part Number | SI2316DS-T1-E3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 215pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 3.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SI2310-TP | Micro Commercial Co | N-CHANNEL MOSFET, SOT-23 PACKAGE | Details |
 |
SI2311DS | VISHAY | P-Channel 1.8-V (G-S) MOSFET | Details |
|
SI2311DS-T1-E3 | Vishay Siliconix | MOSFET P-CH 8V 3A SOT23 | Details |
|
SI2311DS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 3A SOT23 | Details |
|
SI2312 | HJX | SI2312 HJX SOT-23 New Original Stocks | Details |
|
SI2312-TP | Micro Commercial Co | N-CHANNEL MOSFET, SOT-23 PACKAGE | Details |
|
SI2312BDS | VISHAY | SI2312BDS VISHAY SOT23 New Original Stocks | Details |
|
SI2312BDS-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 | Details |
|
SI2312BDS-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 | Details |
|
SI2312CDS | VIS | SI2312CDS VIS SOT-23 New Original Stocks | Details |
