Part Number | SI1039X-T1-GE3 |
---|---|
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 870mA (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 170mW (Ta) |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 870mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Weight | - |
Country of Origin | - |