Part Number | SI1022R-T1-E3 |
---|---|
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 330mA (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 250mW (Ta) |
Rds On (Max) @ Id, Vgs | 1.25 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-75A |
Package / Case | SC-75A |
Weight | - |
Country of Origin | - |