IRLD110

IRLD110 - Vishay Siliconix

Part Number
IRLD110
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 100V 1A 4-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRLD110 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3736 pcs
Reference Price
USD 0/pcs
Our Price
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IRLD110 Detailed Description

Part Number IRLD110
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4V, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 5V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
Weight -
Country of Origin -

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