IRFUC20PBF

IRFUC20PBF - Vishay Siliconix

Part Number
IRFUC20PBF
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 600V 2A I-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRFUC20PBF PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3917 pcs
Reference Price
USD 1.39/pcs
Our Price
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IRFUC20PBF Detailed Description

Part Number IRFUC20PBF
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs 4.4 Ohm @ 1.2A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight -
Country of Origin -

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