IRFU110PBF - Vishay Siliconix

Part Number	IRFU110PBF
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Rds On (Max) @ Id, Vgs	540 mOhm @ 900mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251AA
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IRFU010	Vishay Siliconix	MOSFET N-CH 50V 8.2A I-PAK	Details
IRFU014	Vishay Siliconix	MOSFET N-CH 60V 7.7A I-PAK	Details
IRFU014PBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A I-PAK	Details
IRFU020	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRFU020PBF	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRFU024	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRFU024NPBF	Infineon Technologies	MOSFET N-CH 55V 17A I-PAK	Details
IRFU024NPBF/IRFU024PBF	IR	IRFU024NPBF/IRFU024PBF IR TO-251 New Original Stocks	Details
IRFU024PBF	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRFU1010Z	Infineon Technologies	MOSFET N-CH 55V 42A I-PAK	Details