| Part Number | IRFD210PBF |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 360mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IRFD010 | Vishay Siliconix | MOSFET N-CH 50V 1.7A 4-DIP | Details |
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IRFD010PBF | Vishay Siliconix | MOSFET N-CH 50V 1.7A 4-DIP | Details |
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IRFD014 | Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | Details |
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IRFD014PBF | Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | Details |
 |
IRFD020 | IR | IRFD020 IR DIP-4 New Original Stocks | Details |
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IRFD020PBF | Vishay Siliconix | MOSFET N-CH 50V 2.4A 4-DIP | Details |
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IRFD024 | Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | Details |
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IRFD024PBF | Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | Details |
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IRFD110 | Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | Details |
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IRFD110P | IOR | IRFD110P IOR DIP New Original Stocks | Details |
