TPCC8067-H,LQ(S - Toshiba Semiconductor and Storage

Part Number	TPCC8067-H,LQ(S
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	690pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs	25 mOhm @ 4.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPCC8001-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 22A 8TSON	Details
TPCC8002-H	TOSHIBA	TPCC8002-H TOSHIBA MLP-8 New Original Stocks	Details
TPCC8002-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 22A 8TSON	Details
TPCC8002-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 22A 8TSON	Details
TPCC8003-H	TOSHIBA	TPCC8003-H TOSHIBA MLP-8 New Original Stocks	Details
TPCC8003-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 13A 8TSON	Details
TPCC8005-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 26A 8TSON	Details
TPCC8006-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 22A 8TSON	Details
TPCC8008(TE12L,QM)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 25A 8TSON	Details
TPCC8009,LQ(O	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 24A 8TSON-ADV	Details