TPC8062-H,LQ(CM Detailed Description
Part Number |
TPC8062-H,LQ(CM |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
18A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V, 10V |
Vgs(th) (Max) @ Id |
2.3V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 10V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
1W (Ta) |
Rds On (Max) @ Id, Vgs |
5.8 mOhm @ 9A, 10V |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SOP |
Package / Case |
8-SOIC (0.173", 4.40mm Width) |
Weight |
- |
Country of Origin |
- |
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