SSM6N35FE,LM

SSM6N35FE,LM - Toshiba Semiconductor and Storage

Part Number
SSM6N35FE,LM
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET 2N-CH 20V 0.18A ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SSM6N35FE,LM PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
30000 pcs
Reference Price
USD 0.077/pcs
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SSM6N35FE,LM Detailed Description

Part Number SSM6N35FE,LM
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 180mA
Rds On (Max) @ Id, Vgs 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6 (1.6x1.6)
Weight -
Country of Origin -

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