SSM3K59CTB,L3F - Toshiba Semiconductor and Storage

Part Number	SSM3K59CTB,L3F
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 8V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.1nC @ 4.2V
Input Capacitance (Ciss) (Max) @ Vds	130pF @ 10V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Rds On (Max) @ Id, Vgs	215 mOhm @ 1A, 8V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	CST3B
Package / Case	3-SMD, No Lead
Weight	-
Country of Origin	-

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