SSM3J351R,LF - Toshiba Semiconductor and Storage

Part Number	SSM3J351R,LF
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
Vgs (Max)	+10V, -20V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Rds On (Max) @ Id, Vgs	134 mOhm @ 1A, 10V
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	SOT-23F
Package / Case	SOT-23-3 Flat Leads
Weight	-
Country of Origin	-

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