RN4906FE,LF(CB - Toshiba Semiconductor and Storage

Part Number	RN4906FE,LF(CB
Part Status	Active
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RN4901	TOSHIBA	RN4901 TOSHIBA SOT-36.. New Original Stocks	Details
RN4901(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6	Details
RN4901,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6	Details
RN4901,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6	Details
RN4902	TOSHIBA	RN4902 TOSHIBA SOT363 New Original Stocks	Details
RN4902,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6	Details
RN4902,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6	Details
RN4902FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6	Details
RN4902FE,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6	Details
RN4903(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6	Details