RN1409,LF

RN1409,LF - Toshiba Semiconductor and Storage

Part Number
RN1409,LF
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PREBIAS NPN 50V 0.2W SMINI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RN1409,LF PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
22500 pcs
Reference Price
USD 0.0419/pcs
Our Price
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RN1409,LF Detailed Description

Part Number RN1409,LF
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Weight -
Country of Origin -

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