2SC5201,T6MURAF(J

2SC5201,T6MURAF(J - Toshiba Semiconductor and Storage

Part Number
2SC5201,T6MURAF(J
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS NPN 50MA 600V TO226-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SC5201,T6MURAF(J PDF online browsing
Datasheet PDF Download
2SC5201,T6MURAF(J.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4152 pcs
Reference Price
USD 0/pcs
Our Price
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2SC5201,T6MURAF(J Detailed Description

Part Number 2SC5201,T6MURAF(J
Part Status Last Time Buy
Transistor Type NPN
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 600V
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 20mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 20mA, 5V
Power - Max 900mW
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Weight -
Country of Origin -

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