1SS367,H3F - Toshiba Semiconductor and Storage

Part Number	1SS367,H3F
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	10V
Current - Average Rectified (Io)	100mA
Voltage - Forward (Vf) (Max) @ If	500mV @ 100mA
Speed	Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	20µA @ 10V
Capacitance @ Vr, F	40pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	SC-76, SOD-323
Supplier Device Package	-
Operating Temperature - Junction	125°C (Max)
Weight	-
Country of Origin	-

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