TPS1101DR - Texas Instruments

Part Number	TPS1101DR
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	15V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.7V, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	+2V, -15V
FET Feature	-
Power Dissipation (Max)	791mW (Ta)
Rds On (Max) @ Id, Vgs	90 mOhm @ 2.5A, 10V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPS-1	Eaton	FUSE CARTRIDGE 1A 170VDC NON STD	Details
TPS-10	Eaton	FUSE CRTRDGE 10A 170VDC NON STD	Details
TPS-10L	Eaton	FUSE CRTRDGE 10A 170VDC CYLINDR	Details
TPS-15	Eaton	FUSE CRTRDGE 15A 170VDC NON STD	Details
TPS-15L	Eaton	FUSE CRTRDGE 15A 170VDC CYLINDR	Details
TPS-1L	Eaton	FUSE CARTRIDGE 1A 170VDC CYLINDR	Details
TPS-1LB	Eaton	FUSE CARTRIDGE 1A 170VDC CYLINDR	Details
TPS-2	Eaton	FUSE CARTRIDGE 2A 170VDC NON STD	Details
TPS-20	Eaton	FUSE CRTRDGE 20A 170VDC NON STD	Details
TPS-20L	Eaton	FUSE CRTRDGE 20A 170VDC CYLINDR	Details