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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays, Pre-Biased › IMB4AT110
IMB4AT110

IMB4AT110 - Rohm Semiconductor

Part Number
IMB4AT110
Manufacturer
Rohm Semiconductor
Brief Description
TRANS PREBIAS DUAL PNP SMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IMB4AT110 PDF online browsing
Datasheet PDF Download
IMB4AT110.pdf
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
285089 pcs
Reference Price
USD 0.0954/pcs
Our Price
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IMB4AT110 Detailed Description

Part Number IMB4AT110
Part Status Not For New Designs
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) -
Frequency - Transition 250MHz
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package SMT6
Weight -
Country of Origin -

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