NSVMMUN2212LT1G - ON Semiconductor

Part Number	NSVMMUN2212LT1G
Part Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	22k
Resistor - Emitter Base (R2) (Ohms)	22k
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	246mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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NSVMMBD717LT1G	ON Semiconductor	DIODE SCHOTTKY 20V SC70-3	Details
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NSVMMBT2222ATT1G	ON Semiconductor	TRANS NPN 40V 0.6A SC75	Details
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NSVMMBT2907AWT1G	ON Semiconductor	TRANS PNP 60V 0.6A SC70	Details
NSVMMBT3906TT1G	ON Semiconductor	TRANS PNP BIPO 40V SC75-3	Details
NSVMMBT4401WT1G	ON Semiconductor	TRANS NPN 40V BIPOLAR SC70-3	Details