| Part Number | FCP190N65S3R0 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
FCP190N60 | Fairchild/ON Semiconductor | MOSFET N-CH 600V TO220-3 | Details |
|
FCP190N60-GF102 | ON Semiconductor | MOSFET N-CH 600V TO-220-3 | Details |
|
FCP190N60E | Fairchild/ON Semiconductor | MOSFET N-CH 600V TO220-3 | Details |
|
FCP190N60_GF102 | Fairchild/ON Semiconductor | MOSFET N-CH 600V TO-220-3 | Details |
 |
FCP190N65F | Fairchild/ON Semiconductor | MOSFET N-CH 650V 20.6A TO220-3 | Details |
|
FCP190N65S3 | ON Semiconductor | MOSFET N-CH 650V 17A TO220-3 | Details |
|
FCP190N65S3R0 | ON Semiconductor | MOSFET N-CH 650V 190MOHM TO220 I | Details |
 |
FCP1913H104G | Cornell Dubilier Electronics (CDE) | CAP FILM 0.1UF 2% 50VDC 1913 | Details |
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FCP1913H104G-E2 | Cornell Dubilier Electronics (CDE) | CAP FILM 0.1UF 2% 50VDC 1913 | Details |
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FCP1913H104G-E3 | Cornell Dubilier Electronics (CDE) | CAP FILM 0.1UF 2 50VDC 1913 | Details |
