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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single › BD810G
BD810G

BD810G - ON Semiconductor

Part Number
BD810G
Manufacturer
ON Semiconductor
Brief Description
TRANS PNP 80V 10A TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BD810G PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
55340 pcs
Reference Price
USD 0.4681/pcs
Our Price
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BD810G Detailed Description

Part Number BD810G
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max) 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V
Power - Max 90W
Frequency - Transition 1.5MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Weight -
Country of Origin -

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