PDTA123JS,126 - NXP USA Inc.

Part Number	PDTA123JS,126
Part Status	Obsolete
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PDTA113EE,115	NXP USA Inc.	TRANS PREBIAS PNP 150MW SC75	Details
PDTA113EK,115	NXP USA Inc.	TRANS PREBIAS PNP 250MW SMT3	Details
PDTA113EM,315	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW SOT883	Details
PDTA113EMB,315	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW 3DFN	Details
PDTA113ES,126	NXP USA Inc.	TRANS PREBIAS PNP 500MW TO92-3	Details
PDTA113ET,215	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW TO236AB	Details
PDTA113EU,115	Nexperia USA Inc.	TRANS PREBIAS PNP 200MW SOT323	Details
PDTA113ZE,115	NXP USA Inc.	TRANS PREBIAS PNP 150MW SC75	Details
PDTA113ZK,115	NXP USA Inc.	TRANS PREBIAS PNP 250MW SMT3	Details
PDTA113ZM,315	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW SOT883	Details