| Part Number | 74HCT4351DB,118 |
|---|---|
| Part Status | Active |
| Switch Circuit | - |
| Multiplexer/Demultiplexer Circuit | 8:1 |
| Number of Circuits | 1 |
| On-State Resistance (Max) | 120 Ohm |
| Channel-to-Channel Matching (ΔRon) | 6 Ohm |
| Voltage - Supply, Single (V+) | 4.5 V ~ 5.5 V |
| Voltage - Supply, Dual (V±) | ±1 V ~ 5 V |
| Switch Time (Ton, Toff) (Max) | 35ns, 23ns |
| -3db Bandwidth | 170MHz |
| Charge Injection | - |
| Channel Capacitance (CS(off), CD(off)) | 3.5pF |
| Current - Leakage (IS(off)) (Max) | 100nA |
| Crosstalk | - |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Package / Case | 20-SSOP (0.209", 5.30mm Width) |
| Supplier Device Package | 20-SSOP |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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74HCT00AF | TOSHIB | 74HCT00AF TOSHIB SOP5.2 New Original Stocks | Details |
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74HCT00AP | TOSHIBA | 74HCT00AP TOSHIBA DIP-14 New Original Stocks | Details |
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74HCT00BQ,115 | Nexperia USA Inc. | IC GATE NAND 4CH 2-INP 14-DHVQFN | Details |
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74HCT00BQ-Q100,115 | Nexperia USA Inc. | IC GATE NAND 4CH 2-INP 14-DQFN | Details |
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74HCT00D | Toshiba Semiconductor and Storage | IC GATE NAND 4CH 2-INP 14SOIC | Details |
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74HCT00D(BJ) | Toshiba Semiconductor and Storage | IC GATE NAND QUAD 2 IN 14SOIC | Details |
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74HCT00D,652 | Nexperia USA Inc. | IC GATE NAND 4CH 2-INP 14-SO | Details |
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74HCT00D,653 | Nexperia USA Inc. | IC GATE NAND 4CH 2-INP 14-SO | Details |
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74HCT00D-Q100,118 | Nexperia USA Inc. | IC GATE NAND 4CH 2-INP 14-SO | Details |
